Directed Atom-by-Atom Assembly of Dopants in Silicon
نویسندگان
چکیده
منابع مشابه
Atom devices based on single dopants in silicon nanostructures
Silicon field-effect transistors have now reached gate lengths of only a few tens of nanometers, containing a countable number of dopants in the channel. Such technological trend brought us to a research stage on devices working with one or a few dopant atoms. In this work, we review our most recent studies on key atom devices with fundamental structures of silicon-on-insulator MOSFETs, such as...
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ژورنال
عنوان ژورنال: ACS Nano
سال: 2018
ISSN: 1936-0851,1936-086X
DOI: 10.1021/acsnano.8b02001